MAC4DSN |
RFQ for MAC4DSN Required Field |
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| Technical/Catalog Information | MAC4DSN-1G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Triac Type | Logic - Sensitive Gate |
| Configuration | Single |
| Voltage - Off State | 800V |
| Current - On State (It (RMS)) (Max) | 4A |
| Voltage - Gate Trigger (Vgt) (Max) | 1.3V |
| Current - Gate Trigger (Igt) (Max) | 10mA |
| Current - Hold (Ih) (Max) | 15mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 40A @ 60Hz |
| Mounting Type | Through Hole |
| Package / Case | DPak-3 (3 straight leads + tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MAC4DSN 1G MAC4DSN1G |
| Product | Manufacturers | Pack | D/C |
| MAC4DSN | ON Semiconductor | TO | - |
Typical Application |
Features |
| Designed for high volume, low cost, industrial and consumer applicationssuch as motor control; process control; temperature, light and speed control. | • Small Size Surface Mount DPAK Package• Passivated Die for Reliability and Uniformity• Blocking Voltage to 800 V• OnState Current Rating of 4.0 Amperes RMS at 108°C• Low IGT - 10 mA Maximum in 3 Quadrants• High Immunity to dv/dt - 50 V/s at 125°C |
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SYMBOL |
PARAMETER |
RATING |
UNIT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Peak Repetitive OffState Voltage (1) (TJ = 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DSM MAC4DSN |
VDRM |
600 800 |
Volts | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| OnState RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) |
IT(RMS) |
4.0 |
Amps | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Peak NonRepetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) |
ITSM |
40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Circuit Fusing Consideration (t = 8.3 msec) |
I2t |
6.6 |
A2sec | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Peak Gate Power (Pulse Width 3 10 sec, TC = 108°C) |
PGM |
0.5 |
Watts | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Average Gate Power (t = 8.3 msec, TC = 108°C) |
PG(AV) |
0.1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Peak Gate Current (Pulse Width 3 10 sec, TC = 108°C) |
IGM |
0.2 |
Amps | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Peak Gate Voltage (Pulse Width 3 10 sec, TC = 108°C) |
VGM |
5.0 |
Volts | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Models | MFG | Pack |
| MAC0107 | ||
| MAC02-3 | ||
| MAC08BT1 | SOT-223 | |
| MAC08BT1G | ||
| MAC08MT1 | ||
| MAC12D | ON Semiconductor | TO-220 |
| MAC12DG | ||
| MAC12HCD | ON Semiconductor | |
| MAC12HCDG | ||
| MAC12HCM | ON Semiconductor | |
| MAC12HCN | ON Semiconductor | |
| MAC12HCNG | ||
| MAC12M | ON Semiconductor | TO-220 |
| MAC12MG | ||
| MAC12N | ON Semiconductor | TO220 |
| MAC12NG | ||
| MAC12SM | ON Semiconductor | TO |
| MAC12SMG | ||
| MAC12SN | ON Semiconductor | TO |
| MAC12SNG |
